Use of Ultra Thin Semiconductive Layers as Passivation in Microstrip Gas Chambers
نویسنده
چکیده
We have investigated the properties of thin copper and germanium layers in view of their use in microstrip gas chambers. It was found that ultra thin germanium layers with thicknesses of about 100 A provide surface resistivities in the order of 10 11 {10 14 /2. Such layers evaporated onto the micro structure of microstrip gas chambers manufactured on plastic or glass supports lead to a gain stabilization of these detectors up to very high particle uxes. The present study has been realized in the framework of the collaboration for the Development of Gas Microstrip Chambers for Radiation Detection and Tracking at High Rates (CERN Research and Development Project RD28).
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